@InProceedings{GalvãoGVPMMCD:2018:SiThFi,
author = "Galv{\~a}o, Nierrly K. A. M. and Guerino, Marciel and
Vasconcelos, Get{\'u}lio de and Pessoa, Rodrigo S. and Maciel,
Homero S. and Machado, Jo{\~a}o Paulo Barros and Camus, Julien
and Djouadi, Mohamed Abdou",
affiliation = "{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and
{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and
{Instituto de Estudos Avan{\c{c}}ados (IEAv)} and {Instituto
Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto
Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Universit{\'e} de
Nantes} and {Universit{\'e} de Nantes}",
title = "Sic thin film growth by hipims technique aiming graphene
synthesis",
year = "2018",
organization = "Encontro Nacional de F{\'{\i}}sica da Mat{\'e}ria Condensada
(ENFMC)",
abstract = "Currently, the SiC has been highlighted in the field of
two-dimensional materials. SiC wafer substrates are commonly used
to carry out investigations on synthesis of graphene by thermal
decomposition process. Under certain annealing conditions, the SiC
crystals are decomposed. At the process, the Si sublimation occurs
and the remaining carbon atoms form the epitaxial graphene layer
[1-2]. Usually this process takes place using induction furnaces
at vacuum or at atmospheric pressure with an inert gas flow [3].
The kinetics of formation, the structure and properties of
graphene are influenced by the parameters of the heating process
and also by the orientation and terminated face of the SiC wafer
substrate [4]. This process has been successful to grow graphene
layers on SiC but it involves high cost of material. Aiming a
low-cost solution, in this work we propose the use of SiC thin
films grown by plasma deposition technique using a high-power
impulse magnetron sputtering (HiPMS) source. Recently, the use of
CO2 laser as a source of heating for graphene formation from
single crystal of SiC and SiC particles have been done [5]. The
use of this technique is still new and unexplored and, to the best
of our knowledge, the technical feasibility using SiC thin films
was not reported. Herein, the thermal-decomposition was carried by
two techniques: (i) carbon dioxide laser beam heating without
vacuum or controlled atmosphere and (ii) furnace using work
pressure 10\−7 Torr. For thermal decomposition using
furnace, a layer of Ni film was deposited on top of the SiC film.
Contrary to that observed with graphene grown on the single
crystal SiC wafer [4], using SiC thin films the graphene grows
without the requirement of a (Si-C) face-termination. The obtained
films were characterized by chemical, structural, morphological
and electrical analysis using Raman spectroscopy, atomic force
microscopy, and 4 points probe method.",
conference-location = "Foz do Igua{\c{c}}u, PR",
conference-year = "06-11 maio",
language = "en",
urlaccessdate = "13 maio 2024"
}